By Norman G. Einspruch,Norman Einspruch
Comprised of 8 chapters, this quantity starts with a common photo of MOS know-how improvement from the equipment and processing issues of view. The serious factor of hot-carrier results is mentioned, besides the gadget engineering facets of this challenge; the rising low-temperature MOS know-how; and the matter of latchup in scaled MOS circuits. a number of machine versions which are appropriate to be used in circuit simulators also are defined. The final bankruptcy examines novel electron delivery results saw in ultra-small MOS constructions.
This e-book may still end up invaluable to semiconductor engineers taken with assorted features of MOS know-how improvement, in addition to for researchers during this box and scholars of the corresponding disciplines.
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Extra resources for Advanced MOS Device Physics: 18 (V L S I Electronics)
Advanced MOS Device Physics: 18 (V L S I Electronics) by Norman G. Einspruch,Norman Einspruch